IS61LF51218A-7.5TQLI ISSI, Integrated Silicon Solution Inc, IS61LF51218A-7.5TQLI Datasheet - Page 12

• Manufacturer Part Number: IS61LF51218A-7.5TQLI
• Description: IC SRAM 9MBIT 7.5NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF51218A-7.5TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1094; IS61LF51218A-7.5TQLI

OPERATING RANGE (IS61VFxxxxx)
Range
Commercial
Industrial
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
OPERATING RANGE (IS64LFxxxxx)
Range
Automotive
DC ELECTRICAL CHARACTERISTICS
Symbol
V
V
V
V
I
POWER SUPPLY CHARACTERISTICS
Symbol Parameter
I
I
Note:
1. MODE pin has an internal pullup and should be tied to V
12
OPERATING RANGE (IS61LFxxxxx)
Range
Commercial
Industrial
I
cc
sb
sbI
I
lI
lO
Oh
Ol
Ih
Il
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
cMOs Input
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Ambient Temperature
Ambient Temperature
Ambient Temperature
-40°C to +125°C
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
f = 0
All Inputs ≤ 0.2V or ≥ V
dd
dd
IN
≤ V
= Max.,
= Max.,
Il
Ih
ss
, f = Max.
Test Conditions
I
I
I
I
V
V
, ZZ ≤ V
Oh
Oh
Ol
Ol
ss
ss
+ 0.2V or ≥V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
Il
kc
or ≥ V
IN
OuT
Il
min.
,
≤ V
dd
(Over Operating Range)
≤ V
or V
Ih
dd
,
dd
ddq
(1)
dd
(1)
ss
– 0.2V
– 0.2V, A
. It exhibits ±100 µA maximum leakage current when tied to ≤ V
, OE = V
(Over Operating Range)
2.5V ± 5%
2.5V ± 5%
3.3V ± 5%
Temp. range
3.3V ± 5%
3.3V ± 5%
V
V
V
DD
DD
Ih
DD
Com.
Com.
A
Com.
Auto.
uTO
uTO
Ind.
Ind.
Ind.
.
.
Min.
–0.3
2.4
2.0
—
–5
–5
MAx
6.5
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
185
190
140
150
3.3V
x18
2.5V ± 5%
80
85
2.5V ± 5%
V
V
V
V
dd
Max.
DDq
DDq
0.4
0.8
DDq
—
185
190
140
150
5
5
x36
+ 0.3
80
85
Integrated Silicon Solution, Inc.
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
ss
175
185
225
140
150
150
130
x18
80
85
+ 0.2V or ≥ V
V
7.5
MAx
dd
Max.
0.4
0.7
—
5
5
+ 0.3
175
185
225
140
150
150
130
x36
80
85
dd
– 0.2V.
07/22/2010
Unit
mA
mA
mA
Unit
µA
µA
Rev. H
V
V
V
V