IS61LF25636A-7.5TQLI ISSI, Integrated Silicon Solution Inc, IS61LF25636A-7.5TQLI Datasheet - Page 17

• Manufacturer Part Number: IS61LF25636A-7.5TQLI
• Description: IC SRAM 9MBIT 7.5NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF25636A-7.5TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 9Mb
• Access Time (max): 7.5ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 117MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 185mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1093; IS61LF25636A-7.5TQLI

IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
WRITE CYCLE TIMING
Integrated Silicon Solution, Inc.
Rev. H
07/22/2010
BWd-BWa
DATA
Address
DATA
ADSC
ADSP
CLK
ADV
BWE
CE2
CE2
OUT
GW
CE
OE
IN
t
t
t
CES
CES
High-Z
High-Z
CES
t
t
SS
AS
Single Write
WR1
t
ADV must be inactive for ADSP Write
DS
t
t
t
WS
WS
WS
t
t
t
t
SH
t
AH
CEH
CEH
CEH
t
KH
WR1
1a
t
KC
t
t
t
WH
WH
WH
t
DH
WR2
t
KL
BW4-BW1 only are applied to first cycle of WR2
t
WS
CE2 and CE3 only sampled with ADSP or ADSC
WR2
2a
CE1 Masks ADSP
Burst Write
t
AVS
t
WH
2b
t
AVH
2c
ADSP is blocked by CE1 inactive
2d
ADSC initiate Write
Write
WR3
WR3
3a
Unselected
Unselected with CE2
17