IS61LF25636A-7.5TQLI ISSI, Integrated Silicon Solution Inc, IS61LF25636A-7.5TQLI Datasheet - Page 11

• Manufacturer Part Number: IS61LF25636A-7.5TQLI
• Description: IC SRAM 9MBIT 7.5NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF25636A-7.5TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 9Mb
• Access Time (max): 7.5ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 117MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 185mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1093; IS61LF25636A-7.5TQLI

IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
LINEAR BURST ADDRESS TABLE (MODE = VSS)
ABSOLUTE MAxIMUM RATINGS
Symbol Parameter
T
P
I
V
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
2. This device contains circuity to protect the inputs against damage due to high static voltages
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc.
Rev. H
07/22/2010
INTERLEAVED BURST ADDRESS TABLE (MODE = V
External Address
nent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
or electric fields; however, precautions may be taken to avoid application of any voltage
higher than maximum rated voltages to this high-impedance circuit.
OuT
sTg
d
IN
IN
dd
, V
A1 A0
A1', A0' = 1,1
OuT
00
01
10
11
Voltage Relative to Vss for I/O Pins
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to Vss for
for Address and Control Inputs
Voltage on V
1st Burst Address
dd
Supply Relative to Vss
A1 A0
01
00
11
10
0,0
1,0
(1)
2nd Burst Address
–0.5 to V
A1 A0
0,1
–0.5 to V
10
11
00
01
–55 to +150
–0.5 to 4.6
Value
100
1.6
ddq
dd
DD
+ 0.5
+ 0.5
or No Connect)
3rd Burst Address
Unit
mA
°C
W
V
V
V
A1 A0
11
10
01
00
11