PESD5V0L6UAS /T3 NXP Semiconductors, PESD5V0L6UAS /T3 Datasheet - Page 7

• Manufacturer Part Number: PESD5V0L6UAS /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V0L6USr

Specifications of PESD5V0L6UAS /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 6 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 3 mm W x 3 mm L
• Package / Case: SOT-505
• Peak Pulse Power Dissipation: 35 W
• Factory Pack Quantity: 2500
• Part # Aliases: PESD5V0L6UAS,118

NXP Semiconductors
PESD5V0L6UAS_US_3
Product data sheet
Fig 7.
GND
GND
ESD clamping test setup and waveforms
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
IEC61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C
Z
R
Z
Z
= 330
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
PESD5V0L6UAS; PESD5V0L6US
Rev. 03 — 18 August 2009
450
Low capacitance 6-fold ESD protection diode arrays
DUT: PESD5V0L6UAS
50
RG 223/U
PESD5V0L6US
GND
GND
coax
clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
ATTENUATOR
10
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
4 GHz DIGITIZING
OSCILLOSCOPE
© NXP B.V. 2009. All rights reserved.
50
006aaa064
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