PESD5V0L6UAS /T3 NXP Semiconductors, PESD5V0L6UAS /T3 Datasheet
PESD5V0L6UAS /T3
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PESD5V0L6UAS /T3 Summary of contents
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PESD5V0L6UAS; PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays Rev. 03 — 18 August 2009 1. Product profile 1.1 General description Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to protect up to six transmission or ...
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... NXP Semiconductors 2. Pinning information Table 3. Pin TSSOP8 SO8 Ordering information Table 4. Type number PESD5V0L6UAS PESD5V0L6US 4. Marking Table 5. Type number PESD5V0L6UAS PESD5V0L6US PESD5V0L6UAS_US_3 Product data sheet PESD5V0L6UAS; PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays ...
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... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode amb T stg [1] Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5; see [2] Measured from pin pin ...
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... NXP Semiconductors 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 PESD5V0L6UAS_US_3 Product data sheet PESD5V0L6UAS; PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays 001aaa630 Fig 2. Rev. 03 — 18 August 2009 ...
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... NXP Semiconductors 6. Characteristics Table 9. Characteristics unless otherwise specified amb Symbol Parameter Per diode V reverse stand-off voltage RWM I reverse leakage current RM V clamping voltage (CL)R V breakdown voltage (BR) r differential resistance dif C diode capacitance d [1] Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5; see [2] Measured between each cathode on pins and anode on pin ...
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... NXP Semiconductors ( amb Fig 3. Peak pulse power as a function of exponential pulse duration t ; typical values (pF MHz amb Fig 5. Diode capacitance as a function of reverse voltage; typical values ...
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... NXP Semiconductors ESD TESTER IEC61000-4-2 network C = 150 pF 330 Z Z vertical scale = 200 V/div horizontal scale = 50 ns/div GND unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) Fig 7 ...
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... NXP Semiconductors 7. Application information The PESD5V0L6UAS and the PESD5V0L6US are designed for protection six unidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0L6UAS and the PESD5V0L6US may be used on lines where the signal polarity is above or below ground. ...
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... NXP Semiconductors 8. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.05 0.80 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...
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... NXP Semiconductors SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PESD5V0L6UAS SOT505-1 PESD5V0L6US SOT96-1 [1] For further information and the availability of packing methods, see PESD5V0L6UAS_US_3 Product data sheet PESD5V0L6UAS; PESD5V0L6US ...
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... Revision history Document ID Release date PESD5V06UAS_US_3 20090818 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Table 3 “Discrete PESD5V06UAS_US_2 20041109 PESD5V0L6US_1 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Legal information ...