PESD5V0L6UAS /T3 NXP Semiconductors, PESD5V0L6UAS /T3 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L6UAS /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V0L6USr

Specifications of PESD5V0L6UAS /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 6 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 3 mm W x 3 mm L
• Package / Case: SOT-505
• Peak Pulse Power Dissipation: 35 W
• Factory Pack Quantity: 2500
• Part # Aliases: PESD5V0L6UAS,118

NXP Semiconductors
6. Characteristics
Table 9.
T
[1]
[2]
PESD5V0L6UAS_US_3
Product data sheet
Symbol
Per diode
V
I
V
V
r
C
RM
dif
amb
RWM
(CL)R
(BR)
d
Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5; see
Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
= 25 C unless otherwise specified
Characteristics
Parameter
reverse stand-off voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
Conditions
V
I
I
I
I
V
see
PP
PP
R
R
RWM
R
= 1 mA
= 1 mA
= 0 V; f = 1 MHz;
= 1 A
= 2.5 A
PESD5V0L6UAS; PESD5V0L6US
Figure 5
= 5 V
Rev. 03 — 18 August 2009
Low capacitance 6-fold ESD protection diode arrays
[1][2]
[1][2]
Min
-
-
-
-
6.4
-
-
Typ
-
8
-
-
6.8
-
16
Figure
1.
Max
5
25
10
15
7.2
100
19
© NXP B.V. 2009. All rights reserved.
Unit
V
nA
V
V
V
pF
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