PESD5V0L6UAS /T3 NXP Semiconductors, PESD5V0L6UAS /T3 Datasheet - Page 3

• Manufacturer Part Number: PESD5V0L6UAS /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V0L6USr

Specifications of PESD5V0L6UAS /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 6 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 3 mm W x 3 mm L
• Package / Case: SOT-505
• Peak Pulse Power Dissipation: 35 W
• Factory Pack Quantity: 2500
• Part # Aliases: PESD5V0L6UAS,118

NXP Semiconductors
5. Limiting values
PESD5V0L6UAS_US_3
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Table 8.
Symbol
Per diode
P
I
T
T
T
Symbol
ESD
Standard
IEC 61000-4-2, level 4 (ESD); see
HBM MIL-STD883, class 3
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5;
see
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Figure
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
electrostatic discharge
capability
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
1.
PESD5V0L6UAS; PESD5V0L6US
Rev. 03 — 18 August 2009
Figure 2
Low capacitance 6-fold ESD protection diode arrays
Conditions
IEC 61000-4-2
(contact discharge)
HBM MIL-STD883
Conditions
8/20 s pulse
8/20 s pulse
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
[1][2]
[1][2]
[1][2]
Min
-
-
-
Min
-
-
65
65
Figure
© NXP B.V. 2009. All rights reserved.
Max
35
2.5
150
+150
+150
Max
20
10
2.
Unit
W
A
Unit
kV
kV
C
C
C
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