PESD5V0L6UAS /T3 NXP Semiconductors, PESD5V0L6UAS /T3 Datasheet - Page 10

• Manufacturer Part Number: PESD5V0L6UAS /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V0L6USr

Specifications of PESD5V0L6UAS /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 6 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 3 mm W x 3 mm L
• Package / Case: SOT-505
• Peak Pulse Power Dissipation: 35 W
• Factory Pack Quantity: 2500
• Part # Aliases: PESD5V0L6UAS,118

NXP Semiconductors
Fig 10. Package outline SOT96-1 (SO8/MS-012)
PESD5V0L6UAS_US_3
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
PESD5V0L6UAS; PESD5V0L6US
b
REFERENCES
0.20
0.19
p
D
5.0
4.8
Rev. 03 — 18 August 2009
5
4
0
(1)
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
Low capacitance 6-fold ESD protection diode arrays
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
0.028
0.024
L
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
v
0.25
0.01
A
w
v
X
M
0.004
A
0.1
© NXP B.V. 2009. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
o
o
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