PESD5V0L6UAS /T3 NXP Semiconductors, PESD5V0L6UAS /T3 Datasheet - Page 6

• Manufacturer Part Number: PESD5V0L6UAS /T3
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-13
• Manufacturer: NXP Semiconductors
• Series: PESD5V0L6USr

Specifications of PESD5V0L6UAS /T3

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 6 Channels
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 3 mm W x 3 mm L
• Package / Case: SOT-505
• Peak Pulse Power Dissipation: 35 W
• Factory Pack Quantity: 2500
• Part # Aliases: PESD5V0L6UAS,118

NXP Semiconductors
PESD5V0L6UAS_US_3
Product data sheet
Fig 3.
Fig 5.
(pF)
P
(W)
C
pp
10
d
10
18
16
14
12
10
1
8
2
1
0
T
Peak pulse power as a function of exponential
pulse duration t
Diode capacitance as a function of reverse
voltage; typical values
T
amb
amb
= 25 C
= 25 C; f = 1 MHz
1
10
2
p
; typical values
10
2
3
10
3
4
001aaa192
001aaa194
t
p
V
( s)
R
PESD5V0L6UAS; PESD5V0L6US
(V)
10
Rev. 03 — 18 August 2009
5
4
Low capacitance 6-fold ESD protection diode arrays
Fig 4.
Fig 6.
P
I
RM(25˚C)
PP(25 C)
P
I
RM
PP
10
1.2
0.8
0.4
10
1
0
1
100
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
50
50
0
100
50
150
© NXP B.V. 2009. All rights reserved.
100
001aaa193
T
001aaa195
T
j
( C)
j
( C)
200
150
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