BCV63B T/R NXP Semiconductors, BCV63B T/R Datasheet - Page 9

• Manufacturer Part Number: BCV63B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63B,215

NXP Semiconductors
13. Revision history
Table 10.
BCV63_63B
Product data sheet
Document ID
BCV63_63B v.4
Modifications:
BCV63_BCV63B_3
BCV63_CNV_2
Revision history
19990521
Release date
20100804
19970310
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1 “Product
Section 3 “Ordering
Section 4
Figure
Section 8 “Application
Section 9 “Test
Figure
Section 11 “Packing
Section 12
Section 14 “Legal
1, 2,
6: superseded by minimized package outline drawing
All information provided in this document is subject to legal disclaimers.
“Marking”: updated
“Soldering”: added
3
and 4: added
Data sheet status
Product data sheet
Product specification
Product specification
information”: added
information”: updated
Rev. 4 — 4 August 2010
profile”: amended
information”: added
information”: added
information”: added
NPN general-purpose double transistors
Change notice
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BCV63; BCV63B
Supersedes
BCV63_BCV63B_3
BCV63_CNV_2
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© NXP B.V. 2010. All rights reserved.
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