BCV63B T/R NXP Semiconductors, BCV63B T/R Datasheet - Page 6

• Manufacturer Part Number: BCV63B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63B,215

NXP Semiconductors
8. Application information
9. Test information
BCV63_63B
Product data sheet
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 5.
Schmitt trigger application
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 August 2010
TR2
R c
1
3
R2
V
i
4
NPN general-purpose double transistors
R1
TR1
2
3
R c
BCV63; BCV63B
mgd829
V
o
© NXP B.V. 2010. All rights reserved.
6 of 12