BCV63B T/R NXP Semiconductors, BCV63B T/R Datasheet - Page 7

• Manufacturer Part Number: BCV63B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63B,215

NXP Semiconductors
10. Package outline
11. Packing information
BCV63_63B
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
BCV63
BCV63B
Fig 6.
For further information and the availability of packing methods, see
Package outline SOT143B
Packing methods
SOT143B
All information provided in this document is subject to legal disclaimers.
2.5
2.1
Dimensions in mm
Rev. 4 — 4 August 2010
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
4
0.88
0.78
3.0
2.8
1.9
1.7
NPN general-purpose double transistors
3
2
0.48
0.38
BCV63; BCV63B
0.45
0.15
Section
1.1
0.9
[1]
0.15
0.09
04-11-16
14.
Packing quantity
3000
-215
© NXP B.V. 2010. All rights reserved.
10000
-235
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