BCV63B T/R NXP Semiconductors, BCV63B T/R Datasheet - Page 2

• Manufacturer Part Number: BCV63B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63B,215

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BCV63_63B
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
[1]
Symbol
Transistor TR2
V
h
Pin
1
2
3
4
Type number
Type number
BCV63
BCV63B
BCV63
BCV63B
FE
CEO
Group selection will be done on TR1. Due to matched dies, h
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Parameter
collector-emitter voltage
DC current gain
Quick reference data
Pinning
Ordering information
Marking codes
BCV63
BCV63B
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
base TR2
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 4 August 2010
Description
plastic surface-mounted package; 4 leads
…continued
open base
V
Conditions
CE
= 700 mV; I
Marking code
*D5
*D6
NPN general-purpose double transistors
C
Simplified outline
= 2 mA
FE
BCV63; BCV63B
4
values for TR2 are the same as for TR1.
1
[1]
[1]
2
3
Min
-
110
200
Typ
-
-
-
Graphic symbol
© NXP B.V. 2010. All rights reserved.
TR1
3
2
Max
6
800
450
TR2
Version
SOT143B
006aab228
Unit
V
1
4
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