BCV63B T/R NXP Semiconductors, BCV63B T/R Datasheet - Page 4

• Manufacturer Part Number: BCV63B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63B,215

NXP Semiconductors
7. Characteristics
BCV63_63B
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol Parameter
Per transistor
I
V
V
V
V
V
V
Transistor TR1
h
V
f
C
Transistor TR2
h
CBO
T
j
FE
FE
CEsat
BEsat
CEsat
BEsat
BE
CEsat
BE
c
= 25
Group selection will be done on TR1. Due to matched dies, h
V
V
BEsat
BE

C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
collector-base
cut-off current
collector-emitter
saturation voltage
base-emitter
saturation voltage
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
Characteristics
BCV63
BCV63B
BCV63
BCV63B
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 August 2010
Conditions
V
V
T
I
I
I
I
V
I
I
I
I
V
f = 100 MHz
V
I
V
I
I
I
V
C
B
C
B
C
C
C
C
E
C
C
C
j
CB
CB
CE
CE
CB
CE
CE
= 150 C
= 10 mA;
= 0.5 mA
= 10 mA;
= 0.5 mA
= 100 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 2 mA
= 100 mA; I
= 2 mA;
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 10 V;
= 700 mV;
= 700 mV
e
= 0 A; f = 1 MHz
C
C
CE
E
E
= 2 mA
= 10 mA;
CE
B
B
B
= 0 A
= 0 A;
NPN general-purpose double transistors
= 5 V
= 5 mA
= 5 mA
= 5 mA
= 5 V
FE
BCV63; BCV63B
[2]
[2]
[3]
[3]
[1]
[3]
values for TR2 are the same as for TR1.
Min
-
-
-
-
110
200
-
-
600
-
100
-
110
200
-
-
Typ
-
-
75
700
-
250
850
650
-
-
4
-
250
700
-
-
© NXP B.V. 2010. All rights reserved.
Max
15
5
300
-
800
450
650
-
750
820
-
-
800
450
-
-
mV
mV
mV
mV
MHz
mV
Unit
nA
A
mV
mV
pF
mV
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