MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 68

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 48:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
COMMAND
BA[1:0]
ADDR
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Single WRITE – Without Auto Precharge
T0
BANK
ROW
ROW
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes: 1. For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
t CK
T1
NOP
2. 15ns is required between <D
3. PRECHARGE command not allowed or
DISABLE AUTO PRECHARGE
See Table 11 on page 46.
t CMS
t CL
COLUMN m
t DS
T2
WRITE
BANK
D
IN
t CH
t CMH
m
t DH
t WR 2
NOP 3
T3
68
IN
T4
NOP 3
m> and the PRECHARGE command, regardless of frequency.
SINGLE BANK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ALL BANKS
t
PRECHARGE
RAS would be violated.
BANK
T5
256Mb: x16, x32 Mobile SDRAM
T6
t RP
NOP
©2006 Micron Technology, Inc. All rights reserved.
BANK
ACTIVE
ROW
T7
Timing Diagrams
T8
NOP
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