MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 50

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15:
Figure 33:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Temperature-Compensated Self Refresh
Parameter/Condition
Self refresh current:
CKE = LOW – 4-bank refresh
Self refresh current:
CKE = LOW – 2-bank refresh
Self refresh current:
CKE = LOW – 1-bank refresh
Self refresh current:
CKE = LOW – Half-bank refresh
Self refresh current:
CKE = LOW – Quarter-bank refresh
150
125
100
75
50
25
0
-40
I
Notes: 2, 28, 30; notes appear on page 52 and page 53
Typical Self Refresh Current vs. Temperature
DD7
-30
Full Array
1/2 Array
1/4 Array
1/8 Array
1/16 Array
– Self Refresh Current Options
-20
-10
0
Temperature (°C)
10
Temperature
Maximum
50
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
20
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Option “L”
Low I
40
256Mb: x16, x32 Mobile SDRAM
220
175
140
125
200
150
130
115
185
140
120
115
175
125
115
110
170
120
110
105
DD
7
50
Standard I
Electrical Specifications
60
©2006 Micron Technology, Inc. All rights reserved.
300
210
190
180
275
180
160
150
265
160
140
140
255
150
130
125
250
140
120
115
DD
7
70
Units
80
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
90