MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 39

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 31:
Figure 32:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
WRITE with Auto Precharge Interrupted by a READ
WRITE with Auto Precharge Interrupted by a WRITE
Internal
States
Internal
States
Note:
Note:
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
DQM is LOW.
DQM is LOW.
BANK n
BANK n
CLK
CLK
DQ
DQ
Page Active
T0
NOP
Page Active
T0
NOP
WRITE - AP
BANK n,
WRITE - AP
Page Active
BANK n
COL a
BANK n,
T1
D
Page Active
BANK n
COL a
a
T1
D
IN
a
IN
WRITE with Burst of 4
WRITE with Burst of 4
T2
a + 1
D
NOP
T2
a + 1
39
IN
D
NOP
IN
BANK m,
READ - AP
T3
COL d
BANK m
a + 2
T3
D
Interrupt Burst, Write-Back
NOP
t
IN
WR - BANK n
READ with Burst of 4
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BANK m,
T4
WRITE - AP
NOP
CL = 3 (bank m)
COL d
BANK m
T4
D
d
t
256Mb: x16, x32 Mobile SDRAM
IN
Interrupt Burst, Write-Back
WR - BANK n
WRITE with Burst of 4
T5
NOP
T5
d + 1
Precharge
t
NOP
D
RP - BANK n
IN
T6
D
NOP
T6
OUT
d
d + 2
NOP
D
t RP - BANK n
IN
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Precharge
DON’T CARE
DON’T CARE
T7
D
d + 1
NOP
t RP - BANK m
OUT
T7
d + 3
NOP
D
t WR - BANK m
IN
Write-Back
Operations