MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 37

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 28:
Figure 29:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Clock Suspend During READ Burst
READ with Auto Precharge Interrupted by a READ
Internal
States
Note:
Note:
COMMAND
INTERNAL
ADDRESS
COMMAND
ADDRESS
CLOCK
BANK m
For this example, CL = 2, BL = 4 or greater, and DQM is LOW.
DQM is LOW.
BANK n
CLK
CKE
DQ
CLK
DQ
T0
BANK,
READ
COL n
Page Active
T0
NOP
T1
READ - AP
NOP
BANK n,
Page Active
BANK n
COL a
T1
READ with Burst of 4
T2
NOP
CL = 3 (bank n)
T2
37
D
NOP
OUT
n
T3
BANK m,
READ - AP
T3
BANK m
COL d
Interrupt Burst, Precharge
Micron Technology, Inc., reserves the right to change products or specifications without notice.
READ with Burst of 4
n + 1
D
OUT
T4
NOP
T4
CL = 3 (bank m)
NOP
256Mb: x16, x32 Mobile SDRAM
D
OUT
a
t
RP - BANK n
T5
NOP
T5
n + 2
D
NOP
OUT
D
a + 1
OUT
DON’T CARE
T6
NOP
T6
D
n + 3
NOP
OUT
©2006 Micron Technology, Inc. All rights reserved.
D
OUT
d
DON’T CARE
Idle
T7
NOP
t RP - BANK m
Precharge
D
d + 1
OUT
Operations