MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 29

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 17:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Terminating a READ Burst
Note:
Continuous page bursts can be truncated with the BURST TERMINATE command, and
fixed-length READ bursts may be truncated with a BURST TERMINATE command, pro-
vided that auto precharge was not activated. The BURST TERMINATE command should
be issued x cycles before the clock edge at which the last desired data element is valid,
where x = CL - 1. This is shown in Figure 17 for each possible CL; data element n + 3 is the
last desired data element of a longer burst.
COMMAND
COMMAND
ADDRESS
ADDRESS
DQM is LOW.
CLK
CLK
DQ
DQ
BANK,
COL n
T0
T0
BANK,
COL n
READ
READ
CL = 2
T1
T1
NOP
NOP
CL = 3
29
T2
T2
NOP
NOP
D
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
D
n + 1
D
OUT
OUT
n
256Mb: x16, x32 Mobile SDRAM
TERMINATE
TERMINATE
T4
BURST
T4
BURST
X = 1 cycle
D
n + 2
D
n + 1
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
D
n + 3
D
n + 2
OUT
OUT
©2006 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
NOP
D
n + 3
OUT
DON’T CARE
Operations
T7
NOP