MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 28

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 15:
Figure 16:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
READ-to-WRITE with Extra Clock Cycle
READ-to-PRECHARGE
Note:
Note:
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
CL = 3. The READ command may be to any bank, and the WRITE command may be to any
bank.
DQM is LOW.
DQM
CLK
CLK
CLK
DQ
DQ
DQ
BANK,
COL n
BANK a,
BANK a,
T0
READ
COL n
COL n
T0
T0
READ
READ
CL = 2
T1
NOP
T1
T1
NOP
NOP
CL = 3
T2
28
NOP
T2
T2
NOP
NOP
D
OUT
n
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
t HZ
NOP
NOP
D
OUT
D
D
n + 1
OUT
OUT
n
n
T4
256Mb: x16, x32 Mobile SDRAM
NOP
PRECHARGE
PRECHARGE
(a or all)
(a or all)
BANK
BANK
T4
T4
X = 1 cycle
D
n + 2
D
n + 1
DON’T CARE
OUT
OUT
T5
BANK,
COL b
X = 2 cycles
WRITE
D
T5
T5
IN
NOP
NOP
b
t
DS
D
n + 3
D
n + 2
OUT
OUT
t RP
t RP
©2006 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
NOP
D
n + 3
OUT
DON’T CARE
Operations
BANK a,
BANK a,
ACTIVE
ACTIVE
T7
T7
ROW
ROW