NDS8434_Q Fairchild Semiconductor, NDS8434_Q Datasheet - Page 4

• Manufacturer Part Number: NDS8434_Q
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 6.5 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 63 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 38 ns
• Typical Turn-off Delay Time: 169 ns

Typical Electrical Characteristics
-25
-20
-15
-10
-25
-20
-15
-10
-5
-5
0
0
1.6
1.4
1.2
0.8
0.6
0
0
1
-50
V
Figure 1. On-Region Characteristics.
DS
Figure 5. Transfer Characteristics.
V
Figure 3. On-Resistance Variation
= -5.0V
GS
V
-0.5
-25
-0.5
I
D
GS
= -4.5V
= -6.5A
= -4.5V
V
V
GS
DS
0
T , JUNCTION TEMPERATURE (°C)
with Temperature.
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
-2.5
-1
-1
25
-2.7
-3.0
-1.5
-1.5
50
T
J
= -55°C
-2.0
75
-2
-2
100
-2.5
-2.5
-1.5
125°C
25°C
125
-3
-3
150
2.5
1.5
0.5
1.4
1.2
0.8
0.6
0.4
1.5
0.5
2
1
1
2
1
-50
0
0
with Drain Current and Gate Voltage.
with Drain Current and Temperature.
Figure 6. Gate Threshold Variation
V
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
V
GS
-25
GS
= -4.5V
= -2.0V
-5
-5
0
with Temperature.
T , JUNCTION TEMPERATURE (°C)
J
I
I
D
D
25
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-10
-10
50
-2.5
-2.7
-15
-15
75
T = 125°C
J
-3.0
25°C
-55°C
I
100
V
-3.5
D
DS
-20
= -250µA
-20
= V
-4.5
125
GS
NDS8434 Rev. A3
150
-25
-25