NDS8434_Q Fairchild Semiconductor, NDS8434_Q Datasheet

NDS8434_Q

Manufacturer Part Number

NDS8434_Q

Description

MOSFET Single P-Ch FET Enhancement Mode

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDS8434_Q.pdf (7 pages)

Specifications of NDS8434_Q

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

- 6.5 A

Resistance Drain-source Rds (on)

0.035 Ohms

Configuration

Single Quad Drain Triple Source

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Fall Time

63 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

2.5 W

Rise Time

38 ns

Typical Turn-off Delay Time

169 ns

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___________________________________________________________________________________________

Absolute Maximum Ratings

Symbol

THERMAL CHARACTERISTICS

DSS

GSS

NDS8434

Single P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

(Note 1a)

Features

-6.5A, -20V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

DS(ON)

NDS8434

-55 to 150

= 0.05

-6.5

= 0.035

-20

2.5

1.2

-8

@ V

= -2.7V.

= -4.5V

DS(ON).

June 1996

NDS8434 Rev. A3

Units

°C/W

°C

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NDS8434_Q Summary of contents

Page 1

... Operating and Storage Temperature Range J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case R JC © 1997 Fairchild Semiconductor Corporation Features -6.5A, -20V. R High density cell design for extremely low R High power and current handling capability in a widely used surface mount package 25° ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS Gate - Body Leakage, Forward I GSSF I Gate - Body Leakage, Reverse GSSR ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward Voltage SD Notes the sum of the junction-to-case ...

Page 4

Typical Electrical Characteristics - -4.5V GS -3.0 -20 -2.7 -2.5 -15 -2.0 - -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -6. ...

Page 5

Typical Electrical Characteristics 1. -250µA D 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Electrical and Thermal Characteristics -5. -55° - DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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