NDS8434_Q Fairchild Semiconductor, NDS8434_Q Datasheet

no-image

NDS8434_Q

Manufacturer Part Number
NDS8434_Q
Description
MOSFET Single P-Ch FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS8434_Q

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 6.5 A
Resistance Drain-source Rds (on)
0.035 Ohms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
63 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
38 ns
Typical Turn-off Delay Time
169 ns
___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDS8434
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
,T
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
(Note 1a)
Features
-6.5A, -20V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
8
5
6
7
R
DS(ON)
DS(ON)
NDS8434
-55 to 150
= 0.05
-6.5
= 0.035
-20
-20
2.5
1.2
50
25
-8
1
@ V
@ V
GS
4
3
2
1
GS
= -2.7V.
= -4.5V
DS(ON).
June 1996
NDS8434 Rev. A3
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS8434_Q

NDS8434_Q Summary of contents

Page 1

... Operating and Storage Temperature Range J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case R JC © 1997 Fairchild Semiconductor Corporation Features -6.5A, -20V. R High density cell design for extremely low R High power and current handling capability in a widely used surface mount package 25° ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS Gate - Body Leakage, Forward I GSSF I Gate - Body Leakage, Reverse GSSR ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward Voltage SD Notes the sum of the junction-to-case ...

Page 4

Typical Electrical Characteristics - -4.5V GS -3.0 -20 -2.7 -2.5 -15 -2.0 - -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -6. ...

Page 5

Typical Electrical Characteristics 1. -250µA D 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Electrical and Thermal Characteristics -5. -55° - DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

Related keywords