NDS8947_Q Fairchild Semiconductor, NDS8947_Q Datasheet - Page 6

• Manufacturer Part Number: NDS8947_Q
• Description: MOSFET Dual P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8947_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 4 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 19 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 20 ns
• Typical Turn-off Delay Time: 40 ns

Typical Thermal Characteristics
0.05
0.01
0.5
0.1
5 0
2 0
1 0
2.5
1.5
0.5
0 .0 0 5
0 .0 0 2
0 .0 0 1
5
1
0 .0 5
0 .0 2
0 .0 1
0.1
2
1
0 .5
0 .2
0 .1
Figure 14. Maximum Safe Operating Area.
0 .0001
0
Figure 12. SO-8 Dual Package Maximum
1
1c
1 b
R
0.2
SINGLE PULSE
J A
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
V
T
GS
= See Note 1c
A
0.2
2oz COPPER MOUNTING PAD AREA (in
- V
D = 0.5
= 25°C
= -10V
0.5
DS
0.2
0.1
, DRAIN-SOURCE CURRENT (V)
0.05
0 .001
0.02
1
0.01
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
Single Pulse
0.4
Total Power for Dual Operation
2
depending on the circuit board design.
1a
0.6
5
0 .0 1
Power for Single Operation
1 0
4.5"x5" FR-4 Board
T
Still Air
A
= 2 5 C
0.8
2
o
)
3 0
5 0
t , TIME (sec)
0 .1
1
1
4.5
3.5
2.5
4
3
2
0
Figure 13. Maximum Steady- State Drain
1c
1 b
1
.
Current versus Copper Mounting Pad
Area.
0.1
2oz COPPER MOUNTING PAD AREA (in
P(pk)
T - T
Duty Cycle, D = t
1 0
R
J
0.2
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
0.3
JA
1
/ t
JA
(t)
1 0 0
2
4.5"x5" FR-4 Board
T
Still Air
V
A
G S
= 2 5 C
= - 1 0 V
2
o
0.4
)
3 0 0
NDS8947.SAM
1a
0.5