NDS8947_Q Fairchild Semiconductor, NDS8947_Q Datasheet

NDS8947_Q

Manufacturer Part Number

NDS8947_Q

Description

MOSFET Dual P-Ch FET Enhancement Mode

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDS8947_Q.pdf (7 pages)

Specifications of NDS8947_Q

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 4 A

Resistance Drain-source Rds (on)

0.065 Ohms

Configuration

Dual Dual Drain

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Fall Time

19 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

2 W

Rise Time

20 ns

Typical Turn-off Delay Time

40 ns

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________________________________________________________________________________

Symbol

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

DSS

GSS

NDS8947

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Continuous

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

-4A, -30V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

DS(ON)

NDS8947

-55 to 150

= 0.1

= 0.065

-30

-20

-15

1.6

0.9

-4

@ V

= -4.5V.

= -10V

DS(ON)

March 1996

NDS8947.SAM

Units

°C/W

°C

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NDS8947_Q Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case R JC © 1997 Fairchild Semiconductor Corporation Features -4A, -30V. R High density cell design for extremely low R High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS I Gate - Body Leakage, Forward GSSF Gate - Body Leakage, Reverse I GSSR ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward Voltage SD t Reverse Recovery Time rr Notes ...

Page 4

Typical Electrical Characteristics - -10V GS -6.0 -5.0 -15 -4.5 - DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -4. -10V 1.4 GS 1.2 1 ...

Page 5

Typical Electrical Characteristics 1 -250µA 1.08 D 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Thermal Characteristics 2.5 Total Power for Dual Operation 0.5 0 0.2 0.4 0.6 2oz COPPER MOUNTING PAD AREA (in Figure 12. SO-8 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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