FDC6312P_Q Fairchild Semiconductor, FDC6312P_Q Datasheet - Page 3

• Manufacturer Part Number: FDC6312P_Q
• Description: MOSFET SSOT-6 P-CH DUAL
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6312P_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 2.3 A
• Resistance Drain-source Rds (on): 0.115 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 5.3 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.96 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 18 ns

Typical Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.5
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
DS
V
= 5V
GS
V
I
D
GS
-3.5V
= -4.5V
= -2.3A
-25
=-4.5V
0.5
1
-V
-V
GS
DS
, GATE TO SOURCE VOLTAGE (V)
T
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
-2.5V
1.5
1
25
-3.0V
-2.0V
50
T
A
= -55
1.5
2
-1.8V
75
o
C
25
100
o
o
C)
C
-1.5V
2.5
125
2
o
C
125
150
2.5
3
Figure 6. Body Diode Forward Voltage Variation
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.0001
0.001
0.01
2.25
1.75
1.25
0.75
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
2.5
1.5
1
10
1
2
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
= -1.8V
Gate-to-Source Voltage.
0.2
-V
1
-V
SD
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
= 125
-2.0V
T
0.4
-I
A
2
D
= 25
o
, DRAIN CURRENT (A)
C
o
-2.5V
C
3
25
0.6
3
T
o
A
C
= 125
-3.0V
-55
o
0.8
C
o
4
C
-3.5V
4
FDC6312P Rev C (W)
I
D
1
5
= -0.8 A
-4.5V
1.2
6
5