FDC6312P_Q Fairchild Semiconductor, FDC6312P_Q Datasheet
FDC6312P_Q
Specifications of FDC6312P_Q
Related parts for FDC6312P_Q
FDC6312P_Q Summary of contents
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... FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications Power management ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
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Typical Characteristics -4.5V GS -3.0V 5 -3.5V -2.5V 4 -2.0V 3 -1. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -2. =-4.5V GS ...
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Typical Characteristics -2. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 10 R LIMIT DS(ON) 100ms 1s 1 10s -4.5V ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...