NDS8435A_Q Fairchild Semiconductor, NDS8435A_Q Datasheet - Page 5
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NDS8435A_Q
Manufacturer Part Number
NDS8435A_Q
Description
MOSFET Single P-Ch FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS8435A_Q.pdf
(7 pages)
Specifications of NDS8435A_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 7.9 A
Resistance Drain-source Rds (on)
0.02 Ohms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
46 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
20 ns
Typical Turn-off Delay Time
95 ns
Typical Electrical Characteristics
V
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
GS
Figure 9. Capacitance Characteristics
Figure 11. Switching Test Circuit
5 0 0
3 0 0
1 5 0
1.125
1.075
1.025
0.975
0.925
1.05
0.95
1.1
0 .1
Figure 7. Breakdown Voltage
1
-50
Variation with Temperature.
f = 1 MHz
V
I
D
R
GS
0 .2
= -250µA
-25
GEN
= 0 V
-V
DS
T
0
0 .5
J
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
-V
2
D
S
DD
7 5
R
.
5
L
1 0 0
D U T
.
(continued)
1 0
1 2 5
C rss
C iss
C oss
V
2 0
O U T
1 5 0
3 0
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation
1 0 %
0.0001
0.001
1 0
0.01
8
6
4
2
0
0.1
Figure 10. Gate Charge Characteristics.
20
0
Figure 12. Switching Waveforms
5
1
I
0
D
= -7.9A
V
t
GS
5 0 %
o n
1 0 %
= 0V
0.2
-V
1 0
SD
t
, BODY DIODE FORWARD VOLTAGE (V)
9 0 %
PULSE WIDTH
r
0.4
Q
g
with Source Current and
T = 125°C
2 0
, GATE CHARGE (nC)
J
t
0.6
d(off)
Temperature
25°C
-55°C
5 0 %
3 0
0.8
V
9 0 %
DS
.
t
= -5V
1 0 %
off
9 0 %
.
1
4 0
-15
NDS8435A Rev.C
INVERTED
t
f
1.2
-10
5 0
1