NDS8435 Fairchild Semiconductor, NDS8435 Datasheet

MOSFET P-CH 30V 7A 8-SOIC

NDS8435

Manufacturer Part Number
NDS8435
Description
MOSFET P-CH 30V 7A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS8435

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NDS8435TR

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Absolute Maximum Ratings
___________________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDS8435
Single P-Channel Enhancement Mode Field Effect Transistor
,T
JA
JC
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
General Description
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
such
as
- Pulsed
notebook
T
A
= 25°C unless otherwise noted
computer
power
(Note 1a)
(Note 1)
(Note 1c)
(Note 1a)
(Note 1b)
(Note 1a)
Features
-7A, -30V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
8
5
6
7
R
DS(ON)
DS(ON)
NDS8435
-55 to 150
= 0.028
= 0.045
-30
-20
-25
2.5
1.2
50
25
-7
1
@ V
@ V
GS
GS
= -4.5V.
4
= -10V
3
2
1
DS(ON).
May 1996
NDS8435 Rev. B2
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS8435

NDS8435 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package. computer power = 25°C unless otherwise noted (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) = 0.028 @ V = -10V DS(ON 0.045 @ V = -4.5V. DS(ON) GS DS(ON NDS8435 -30 -20 -7 -25 2.5 1.2 1 -55 to 150 50 25 May 1996 Units °C °C/W °C/W NDS8435 Rev. B2 ...

Page 2

... - 55° - -250 µ 125° - -7 125° - - 1.0 MHz GEN GEN Min Typ Max Units - µA -10 µA 100 nA -100 -0.7 -1.1 -2.2 0.023 0.028 0.038 0.06 0.037 0.045 - 1500 pF 950 pF 370 120 5 NDS8435 Rev. B2 ...

Page 3

... C/W when mounted on a 0.04 in pad of 2oz copper 125 C/W when mounted on a 0.006 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.1 A (Note Min Typ Max Units -2.1 -0.8 -1.2 is guaranteed NDS8435 Rev ...

Page 4

... Figure 6. Gate Threshold Variation -3.5 -4.0 -4.5 -5.0 -6.0 -10 -10 -15 -20 -25 - DRAIN CURRENT ( 125°C J 25°C -55°C -10 -15 -20 -25 - DRAIN CURRENT ( -250µ 100 125 150 T , JUNCTION TEMPERATURE (°C) J with Temperature. NDS8435 Rev. B2 ...

Page 5

... C rss Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms 125°C 25°C -55°C J 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and Temperature -5.0V DS -10V GATE CHARGE (nC off t t d(off PULSE W IDTH NDS8435 Rev. B2 -15V INVERTED ...

Page 6

... G S 0.01 0.8 1 0.1 0 Figure 16. Maximum Safe Operating Area TIME (sec 4.5"x5" FR-4 Board Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( -10V GS = See Note 25° DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDS8435 Rev. B2 ...

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