NDS8435A_Q Fairchild Semiconductor, NDS8435A_Q Datasheet
NDS8435A_Q
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NDS8435A_Q Summary of contents
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... Operating and Storage Temperature Range J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case JC © 1997 Fairchild Semiconductor Corporation Features -7 High density cell design for extremely low R High power and current handling capability in a widely used surface mount package 25° ...
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Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS I Gate - Body Leakage, Forward GSSF Gate - Body Leakage, Reverse I GSSR ON ...
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Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward Voltage SD Notes the sum of the junction-to-case ...
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Typical Electrical Characteristics -30 -4.5 V =-10V GS -4.0 -6.0 -24 -3.5 -18 -3.0 - -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 -7. -10V ...
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Typical Electrical Characteristics 1.125 I = -250µA 1.1 D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...
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Typical Electrical and ThermalCharacteristics 10V -12 - DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain . Current and Temperature 8.5 8 7.5 7 6.5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...