FDMC4435BZ_F125 Fairchild Semiconductor, FDMC4435BZ_F125 Datasheet - Page 3

• Manufacturer Part Number: FDMC4435BZ_F125
• Description: MOSFET -30V P-CH PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC4435BZ_F125

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 8.5 A
• Resistance Drain-source Rds (on): 20 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 31 W

©2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.D2
Typical Characteristics
50
40
30
20
10
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
Figure 1.
0
0
-75
0
1
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
-50
D
V
GS
vs Junction Temperature
DS
= -8.5A
= -10V
= -5V
-V
-V
-25
T
On-Region Characteristics
DS
GS
1
J
2
,
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
0
T
J
= 150
25
V
V
GS
GS
2
o
3
P
C
s
= -10V
= -5V
50
T
J
= 25°C unless otherwise noted
75
P
T
s
J
= -55
3
4
100 125 150
T
o
J
C )
V
V
V
o
= 25
GS
GS
C
GS
= -4.5V
= -4V
= -3.5V
o
C
4
5
3
0.001
0.01
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
10
60
50
40
30
20
10
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
0.2
T
-V
J
-V
= 0V
= 150
SD
10
V
GS
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
On-Resistance vs Gate to
GS
0.4
,
-I
Source Voltage
o
4
T
Source to Drain Diode
GATE TO SOURCE VOLTAGE
D
C
= -3.5V
J
,
= 25
DRAIN CURRENT(A)
0.6
o
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
20
C
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
D
= -8.5A
0.8
6
V
GS
T
T
30
= -4V
J
J
1.0
= 125
= -55
T
J
= 25
o
o
C
C
1.2
8
o
C
(
P
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V
40
V
V
s
V
GS
)
GS
GS
P
1.4
= -4.5V
= -10V
s
= -5V
1.6
50
10