FDMC4435BZ_F125 Fairchild Semiconductor, FDMC4435BZ_F125 Datasheet - Page 2

• Manufacturer Part Number: FDMC4435BZ_F125
• Description: MOSFET -30V P-CH PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC4435BZ_F125

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 8.5 A
• Resistance Drain-source Rds (on): 20 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 31 W

©2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.D2
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3.
4. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
'BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
'V
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
E
GS(th)
SD
'T
'T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
TJA
AS
DSS
GS(th)
DSS
J
J
of 24 mJ is based on starting T = 25 °C, L = 1 mH, I
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
Parameter
a. 53 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
= 25 °C unless otherwise noted
pad of 2 oz copper
AS
= -7 A, V
DD
V
V
I
V
V
V
V
f = 1 MHz
f = 1 MHz
V
I
I
V
V
V
V
I
V
V
V
T
V
F
= -27 V, V
D
D
D
GS
GS
DD
GS
GS
J
DS
GS
DS
GS
GS
GS
GS
GS
GS
DD
= -8.5 A, di/dt = 100 A/Ps
= -250 PA, V
= -250 PA, referenced to 25 °C
= -250 PA, referenced to 25 °C
= 125 °C
= 0 V, I
= 0 V, I
= 0 V to -10 V
= -15 V, V
= -15 V, I
= -10 V, R
= 0 V to -4.5 V
= -24 V,
= 0 V,
= ±25 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, I
= -5 V, I
GS
DS
= -10 V. 100% test at L = 3 mH, I
2
Test Conditions
, I
S
S
= -8.5A
= -1.9 A
D
D
D
D
D
GS
GEN
D
= -250 PA
= -8.5 A
GS
DS
= -8.5 A,
= -8.5 A
= -8.5 A,
= -6.3 A
= 0 V,
= 0 V
= 0 V
= 6 :
V
I
T
D
DD
J
= -8.5 A
= 125 °C
= -15 V,
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
TJC
AS
is guaranteed by design while R
= -4 A.
-1.0
Min
-30
1540
0.92
0.75
-1.9
295
260
Typ
5.3
- 22
10
34
20
33
17
15
23
21
24
22
11
5
6
9
5
2045
Max
-100
-3.0
395
385
1.5
1.2
±10
20
12
55
36
46
24
TCA
20
37
28
-1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
m:
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
PA
PA
:
V
V
S
V