FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 5

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

FDPC8012S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
100
50
10
0.1
10
10
0.001
1
8
6
4
2
0
Figure 7.
1
0.01
0
I
D
Figure 9.
SINGLE PULSE
T
R
T
THIS AREA IS
LIMITED BY r
= 13 A
Figure 11. Forward Bias Safe
J
A
θ
JA
= MAX RATED
= 25
= 151
0.01
V
Switching Capability
o
4
C
DS
Gate Charge Characteristics
t
AV
0.1
T
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
J
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
= 125
DS(on)
g
V
, GATE CHARGE (nC)
DD
0.1
o
= 13 V
8
C
DERIVED FROM
TEST DATA
V
V
1
DD
T
DD
J
= 10 V
= 100
= 15 V
1
12
o
T
C
J
= 25
10
10
16
o
C
1 ms
10 ms
100 ms
1 s
10 s
DC
100
μ
100
s
100
20
T
5
J
= 25°C unless otherwise noted
1000
5000
1000
100
100
0.1
60
48
36
24
12
10
10
0
1
Figure 10.
10
25
0.1
-4
Figure 12.
f = 1 MHz
V
Limited by Package
SINGLE PULSE
R
T
GS
Figure 8.
A
θ
Current vs Case Temperature
JA
= 25
= 0 V
10
= 151
-3
V
50
o
DS
C
Maximum Continuous Drain
, DRAIN TO SOURCE VOLTAGE (V)
Power Dissipation
to Source Voltage
T
o
C/W
C
10
V
,
Single Pulse Maximum
Capacitance vs Drain
t, PULSE WIDTH (sec)
GS
CASE TEMPERATURE
-2
= 4.5 V
75
10
1
V
-1
GS
= 10 V
10
100
0
R
10
θ
(
JC
o
C
1
= 5.0
)
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125
10
100
o
C
C
C
C/W
iss
oss
rss
1000
150
25