FDPC8012S Fairchild Semiconductor, FDPC8012S Datasheet - Page 10

• Manufacturer Part Number: FDPC8012S
• Description: MOSFET 25V Asymmetric Dual N-Channel Pwr Trench
• Manufacturer: Fairchild Semiconductor

Specifications of FDPC8012S

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Dual Asymmetric
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerClip 33
• Fall Time: 3 ns
• Forward Transconductance Gfs (max / Min): 200 S
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 3 ns
• Typical Turn-off Delay Time: 34 ns

FDPC8012S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics
SyncFET
Characteristics
Fairchild’s SyncFET
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDPC8012S.
30
25
20
15
10
-5
diode reverse recovery characteristic
5
0
Figure 27. FDPC8012S SyncFET
0
TM
Schottky body diode
80
TM
process embeds a Schottky diode in
160
TIME (ns)
240
(continued)
di/dt = 300 A/
320
TM
body
μ
s
400
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 28. SyncFET
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
TM
= 125
= 100
= 25
body diode reverse
o
o
o
C
C
C
15
20
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25