PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R2-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.2 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R2-40BS
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
junction temperature
-60
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
003aad326
003aad280
T
T
j
j
(°C)
( ° C)
180
180
Rev. 1 — 20 March 2012
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate charge waveform definitions
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
gate-source voltage
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
2
I
PSMN2R2-40BS
Q
D
GS
Q
min
GS2
Q
G(tot)
typ
Q
GD
4
max
V
© NXP B.V. 2012. All rights reserved.
GS
003aaa508
(V)
03aa35
6
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