PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R2-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.2 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R2-40BS
Product data sheet
Fig 7.
Fig 9.
(S)
g
fs
(A)
250
200
150
100
250
200
150
100
I
D
50
50
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
1.5
50
100
175 °C
3
150
4.5
All information provided in this document is subject to legal disclaimers.
003aad118
V
003aad123
25 °C
I
D
GS
(A)
(V)
200
6
Rev. 1 — 20 March 2012
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DS(on)
12000
10000
(pf)
8000
6000
4000
2000
C
30
25
20
15
10
5
0
10
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
-1
5
PSMN2R2-40BS
10
1
15
V
© NXP B.V. 2012. All rights reserved.
GS
V
003aad124
003aad122
(V)
GS
(V)
C
C
rss
iss
20
10
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