PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R2-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.2 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 7.
Tested to JEDEC standards where applicable.
PSMN2R2-40BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
(A)
300
250
200
150
100
I
D
50
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
10
20
8
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
6
1
…continued
2
V
GS
(V) =
5.5
3
All information provided in this document is subject to legal disclaimers.
003aad116
V
DS
(V)
Conditions
I
see
I
V
I
V
4.5
S
S
S
5
GS
GS
= 25 A; V
= 25 A; dI
= 25 A; dI
4
Rev. 1 — 20 March 2012
Figure 17
= 0 V; V
= 0 V; V
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
GS
S
S
DS
DS
/dt = -100 A/µs;
/dt = -100 A/µs;
= 0 V; T
= 20 V
= 20 V; T
Fig 6.
R
(mΩ)
DSon
j
= 25 °C;
6
5
4
3
2
1
j
of drain current; typical values
Drain-source on-state resistance as a function
0
= 25 °C
50
V
GS
(V) =
100
PSMN2R2-40BS
5
Min
-
-
-
150
200
Typ
0.85
53.7
80.75
10
© NXP B.V. 2012. All rights reserved.
250
003aad117
I
Max
1.2
-
-
D
5.5
(A)
20
6
8
300
Unit
V
ns
nC
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