PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet - Page 3

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PSMN2R2-40BS,118

Manufacturer Part Number
PSMN2R2-40BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN2R2-40BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
2.2 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
306 W
Factory Pack Quantity
800
NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN2R2-40BS
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package
(A)
I
D
300
250
200
150
100
50
0
mounting base temperature.
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
003aag903
T
mb
(°C)
Conditions
T
T
V
V
pulsed; t
T
pulsed; t
V
V
T
j
j
mb
mb
GS
GS
GS
sup
200
≥ 25 °C; T
≥ 25 °C; T
Rev. 1 — 20 March 2012
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 40 V; unclamped; R
p
p
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
Fig 2.
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
P
mb
mb
(%)
der
120
80
40
= 25 °C; see
= 25 °C
0
function of mounting base temperature
Normalized total power dissipation as a
0
GS
GS
D
= 20 kΩ
= 100 A;
= 50 Ω
Figure 1
Figure 1
50
Figure 3
PSMN2R2-40BS
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2012. All rights reserved.
T
mb
20
Max
40
40
100
100
962
306
175
175
260
100
962
1.24
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
J
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