PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R2-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.2 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R2-40BS
Product data sheet
Fig 3.
10
10
10
(A)
10
I
4
D
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
All information provided in this document is subject to legal disclaimers.
(1)
DSon
1
= V
DS
Rev. 1 — 20 March 2012
/ I
D
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
DC
10
PSMN2R2-40BS
t
1 ms
p
100 μs
10 ms
100 ms
= 10 μs
V
© NXP B.V. 2012. All rights reserved.
DS
003aad316
(V)
10
2
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