PSMN2R2-40PS NXP Semiconductors, PSMN2R2-40PS Datasheet
PSMN2R2-40PS
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PSMN2R2-40PS Summary of contents
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... PSMN2R2-40PS N-channel 40 V 2.1 mΩ standard level MOSFET Rev. 02 — 28 September 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... Figure °C; see Figure ≤ 10 µs; pulsed °C; see °C; see Figure 2 mb Rev. 02 — 28 September 2009 PSMN2R2-40PS Graphic symbol mbb076 3 Version SOT78 Min Max - - 100 ...
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... GS 003aad125 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 28 September 2009 PSMN2R2-40PS Min Max - 100 - 962 ≤ 1.24 sup 03aa16 50 100 150 200 T (°C) mb © NXP B.V. 2009. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R2-40PS_2 Product data sheet N-channel 40 V 2.1 mΩ standard level MOSFET Limit DSon DS D (1) 1 Conditions see Figure Rev. 02 — 28 September 2009 PSMN2R2-40PS 003aad316 10 μs 100 μ 100 (V) DS Min Typ Max - 0.25 0.5 003aad100 t p δ ...
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... see Figure 14 and MHz °C; see Figure 0.25 Ω 1.5 Ω R G(ext) Rev. 02 — 28 September 2009 PSMN2R2-40PS Min Typ Max Unit 4 µ ...
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... ° 003aad116 6 5.5 R DSon (mΩ 4 (V) DS Fig 6. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 28 September 2009 PSMN2R2-40PS Min Typ Max - 0.85 1 80.75 - 003aad117 100 150 200 250 ...
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... R DS(on) (mΩ 150 200 0 I (A) D Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 02 — 28 September 2009 PSMN2R2-40PS 003aad122 C iss C rss (V) GS 003aad124 (V) GS © NXP B.V. 2009. All rights reserved ...
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... T (°C) j Fig 12. Sub-threshold drain current as a function of gate-source voltage 003aad326 GS(pl) V GS(th Fig 14. Gate charge waveform definitions 120 180 ( ° Rev. 02 — 28 September 2009 PSMN2R2-40PS 03aa35 min typ max ( GS1 GS2 ...
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... G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° 0.2 0.4 0.6 Rev. 02 — 28 September 2009 PSMN2R2-40PS 003aad121 C iss C oss C rss - (V) DS 003aad119 25 °C 0 (V) sd © NXP B.V. 2009. All rights reserved. ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 02 — 28 September 2009 PSMN2R2-40PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 08-04-23 08-06-13 © NXP B.V. 2009. All rights reserved. SOT78 ...
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... Modifications: Various changes to content. PSMN2R2-40PS_1 20090624 PSMN2R2-40PS_2 Product data sheet N-channel 40 V 2.1 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 28 September 2009 PSMN2R2-40PS Supersedes PSMN2R2-40PS_1 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 28 September 2009 PSMN2R2-40PS © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 September 2009 Document identifier: PSMN2R2-40PS_2 All rights reserved. ...