IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 6
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IPI200N25N3 G
Manufacturer Part Number
IPI200N25N3 G
Description
MOSFET N-Channel 250V MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPI200N25N3_G.pdf
(11 pages)
Specifications of IPI200N25N3 G
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A
Resistance Drain-source Rds (on)
20 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-262-3
Fall Time
12 nS
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
20 nS
Typical Turn-off Delay Time
45 nS
Part # Aliases
IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308
Rev. 2.4
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
70
60
50
40
30
20
10
0
DS
=f(T
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=64 A; V
Coss
Crss
40
20
GS
=10 V
V
T
DS
j
60
98%
[°C]
80
[V]
Ciss
typ
100
120
140
180
160
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
IPB200N25N3 G
j
GS
-20
=V
0.5
175 °C
DS
20
V
T
270 µA
SD
j
60
[°C]
1
2700 µA
[V]
175°C, 98%
25 °C
25°C, 98%
IPP200N25N3 G
IPI200N25N3 G
100
1.5
140
2011-07-14
180
2