IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 2

• Manufacturer Part Number: IPI200N25N3 G
• Description: MOSFET N-Channel 250V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI200N25N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A
• Resistance Drain-source Rds (on): 20 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 12 nS
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 20 nS
• Typical Turn-off Delay Time: 45 nS
• Part # Aliases: IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308

Rev. 2.4
3)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
=25 °C
=125 °C
=64 A
DS
page 2
=V
=200 V, V
=200 V, V
=0 V, I
=20 V, V
=10 V, I
|>2|I
GS
D
, I
|R
D
2
D
=1 mA
D
(one layer, 70 µm thick) copper area for drain
=270 µA
DS(on)max
DS
=64 A
GS
GS
=0 V
=0 V,
=0 V,
IPB200N25N3 G
3)
,
min.
250
61
2
-
-
-
-
-
-
-
-
Values
17.5
typ.
122
0.1
2.4
10
3
1
-
-
-
-
IPP200N25N3 G
IPI200N25N3 G
max.
100
100
0.5
62
40
20
4
1
-
-
-
2011-07-14
Unit
K/W
V
µA
nA
mW
W
S