IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet

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IPI200N25N3 G

Manufacturer Part Number
IPI200N25N3 G
Description
MOSFET N-Channel 250V MOSFET
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPI200N25N3 G

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A
Resistance Drain-source Rds (on)
20 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-262-3
Fall Time
12 nS
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
20 nS
Typical Turn-off Delay Time
45 nS
Part # Aliases
IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308
Rev. 2.4
1)
2)
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
See figure 3
TM
3 Power-Transistor
IPB200N25N3 G
PG-TO263-3
200N25N
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
AS
GS
tot
j
, T
IPP200N25N3 G
PG-TO220-3
200N25N
stg
T
T
T
I
T
D
C
C
C
C
=47 A, R
page 1
=25 °C
=100 °C
=25 °C
=25 °C
GS
=25 W
Product Summary
V
R
I
D
IPI200N25N3 G
PG-TO262-3
200N25N
DS
DS(on),max
IPB200N25N3 G
-55 ... 175
55/175/56
Value
256
320
±20
300
64
46
10
IPP200N25N3 G
IPI200N25N3 G
250
20
64
2011-07-14
Unit
A
mJ
kV/µs
V
W
°C
V
mW
A

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IPI200N25N3 G Summary of contents

Page 1

... D,pulse =25 °C tot stg page 1 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 250 DS DS(on),max D IPI200N25N3 G PG-TO262-3 200N25N Value 64 46 256 320 10 ±20 300 -55 ... 175 55/175/ Unit A mJ kV/µ °C 2011-07-14 ...

Page 2

... GSS = =64 A DS(on |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Values min. typ. max 0 250 - - 0 100 - 1 100 - 17 ...

Page 3

... oss =25 ° S,pulse = =25 ° =100 /dt =100 A/µ page 3 IPP200N25N3 G IPI200N25N3 G Values Unit min. typ. max. - 5340 7100 pF - 297 395 - ...

Page 4

... Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ page 4 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 ...

Page 5

... Typ. forward transconductance g =f 180 160 140 120 100 ° page 5 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 =25 ° 4 100 I [A] D =25 ° [ 120 140 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 120 160 page 6 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 2700 µA 270 µA - 100 T [° 175 °C 25°C, 98% 175°C, 98% 25 °C 0 0.5 1 1.5 V [V] ...

Page 7

... °C 6 100 °C 125 ° 100 1000 0 16 Gate charge waveforms gs(th) Q g(th) 100 140 180 page 7 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 =25 A pulsed D DD 200 V 125 [nC] gate 2011-07- gate ...

Page 8

... PG-TO220-3: Outline Rev. 2.4 IPB200N25N3 G page 8 IPP200N25N3 G IPI200N25N3 G 2011-07-14 ...

Page 9

... PG-TO263-3: Outline Rev. 2.4 IPB200N25N3 G page 9 IPP200N25N3 G IPI200N25N3 G 2011-07-14 ...

Page 10

... PG-TO262-3: Outline Rev. 2.4 IPB200N25N3 G page 10 IPP200N25N3 G IPI200N25N3 G 2011-07-14 ...

Page 11

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 IPB200N25N3 G page 11 IPP200N25N3 G IPI200N25N3 G 2011-07-14 ...

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