IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 5

• Manufacturer Part Number: IPI200N25N3 G
• Description: MOSFET N-Channel 250V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI200N25N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A
• Resistance Drain-source Rds (on): 20 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 12 nS
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 20 nS
• Typical Turn-off Delay Time: 45 nS
• Part # Aliases: IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308

Rev. 2.4
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
150
125
100
140
120
100
75
50
25
80
60
40
20
DS
0
GS
0
); T
); |V
0
0
j
=25 °C
DS
GS
j
|>2|I
1
2
D
|R
DS(on)max
175 °C
2
V
V
DS
GS
4
10 V
[V]
[V]
25 °C
7 V
3
5 V
4.5 V
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
180
160
140
120
100
30
25
20
15
10
80
60
40
20
5
0
D
0
=f(I
); T
0
0
D
j
); T
=25 °C
IPB200N25N3 G
GS
20
j
=25 °C
25
40
4.5 V
50
60
I
I
D
D
5 V
[A]
[A]
80
75
IPP200N25N3 G
IPI200N25N3 G
7 V
100
100
10 V
2011-07-14
120
140
125