IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 4
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IPI200N25N3 G
Manufacturer Part Number
IPI200N25N3 G
Description
MOSFET N-Channel 250V MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPI200N25N3_G.pdf
(11 pages)
Specifications of IPI200N25N3 G
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A
Resistance Drain-source Rds (on)
20 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-262-3
Fall Time
12 nS
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
20 nS
Typical Turn-off Delay Time
45 nS
Part # Aliases
IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308
Rev. 2.4
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
320
280
240
200
160
120
10
10
10
10
10
80
40
0
DS
-1
3
2
1
0
C
10
); T
)
0
-1
C
p
=25 °C; D =0
50
10
0
V
T
DS
C
100
10
[°C]
[V]
1
DC
10 ms
100 µs
1 ms
150
10
10 µs
2
1 µs
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
70
60
50
40
30
20
10
C
0
-1
-2
0
); V
10
p
0
)
-5
0.02
0.01
0.05
GS
0.2
0.5
0.1
IPB200N25N3 G
single pulse
≥10 V
p
10
/T
-4
50
10
T
-3
C
t
100
p
[°C]
[s]
10
IPP200N25N3 G
-2
IPI200N25N3 G
150
10
-1
2011-07-14
200
10
0