IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 3

• Manufacturer Part Number: IPI200N25N3 G
• Description: MOSFET N-Channel 250V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI200N25N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A
• Resistance Drain-source Rds (on): 20 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 12 nS
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 20 nS
• Typical Turn-off Delay Time: 45 nS
• Part # Aliases: IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308

Rev. 2.4
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
V
R
V
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
DD
GS
R
G
=25 °C
F
page 3
=25 °C
=100 V, I
/dt =100 A/µs
=1.6 W
=0 V, V
=100 V,
=10 V, I
=100 V, I
=0 to 10 V
=100 V, V
=0 V, I
F
DS
=64 A,
D
F
=25 A,
=25 A,
D
=100 V,
GS
=25 A,
=0 V
IPB200N25N3 G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
5340
typ.
297
135
170
780
4.2
18
20
45
12
22
13
64
4
7
1
-
-
IPP200N25N3 G
IPI200N25N3 G
max.
7100
395
179
256
1.2
86
64
-
-
-
-
-
-
-
-
-
-
-
2011-07-14
Unit
pF
ns
nC
V
nC
A
V
ns
nC