FGD3040G2_F085 Fairchild Semiconductor, FGD3040G2_F085 Datasheet - Page 6

• Manufacturer Part Number: FGD3040G2_F085
• Description: IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3040G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.15 V
• Maximum Gate Emitter Voltage: 10 V
• Continuous Collector Current At 25 C: 23.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2012 Fairchild Semiconductor Corporation
FGD3040G2_F085 Rev.C1
Typical Performance Curves
12
10
Figure 13.
430
420
410
400
390
380
0.01
8
6
4
2
0
25
0.1
10
2
1
10
I
CE
D = 0.5
-5
= 6.5A, V
I
0.02
SINGLE PULSE
CER
0.10
0.05
0.20
DUTY CYCLE - DESCENDING ORDER
Figure 16.
50
T
= 10mA
J
0.01
, JUNCTION TEMPERATURE
Switching Time vs. Junction
GE
Temperature
= 5V, R
75
Figure 15. Break down Voltage vs. Series Gate Resistance
10
IGBT Normalized Transient Thermal Impedance, Junction to Case
G
-4
100
= 1K
Ω
125
Resistive t
Inductive t
Resistive t
(
10
o
150
t, RECTANGULAR PULSE DURATION(s)
C
R
100
-3
)
(Continued)
G
OFF
, SERIES GATE RESISTANCE (
OFF
ON
175
6
10
Figure 14.
-2
2000
1600
1200
800
400
0
T
J
= 25
o
C
Capacitance vs. Collector to Emitter
V
Ω
DS
)
5
10
, DRAIN TO SOURCE VOLTAGE
T
-1
J
C
= 175
1000
RES
Voltage
10
o
C
C
OES
C
IES
15
T
1
J
= -40
www.fairchildsemi.com
o
C
20
f = 1MHz
V
GE
(
V
= 0V
)
6000
10
25