FGD3040G2_F085 Fairchild Semiconductor, FGD3040G2_F085 Datasheet - Page 5

• Manufacturer Part Number: FGD3040G2_F085
• Description: IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3040G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.15 V
• Maximum Gate Emitter Voltage: 10 V
• Continuous Collector Current At 25 C: 23.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2012 Fairchild Semiconductor Corporation
FGD3040G2_F085 Rev.C1
Typical Performance Curves
Figure 7.
Figure 11.
2.0
1.8
1.6
1.4
1.2
1.0
45
40
35
30
25
20
15
10
Figure 9.
30
20
10
5
0
0
-50
25
0
V
V
V
V
V
GE
GE
GE
V
GE
GE
-25
CE
Collector to Emitter On-State Voltage
= 5.0V
= 4.5V
= 8.0V
= 4.0V
= 3.7V
, COLLECTOR TO EMITTER VOLTAGE (V)
50
T
vs. Collector Current
J
T
DC Collector Current vs. Case
Threshold Voltage vs. Junction
, JUNCTION TEMPERATURE
C
0
, CASE TEMPERATURE(
1
Temperature
Temperature
75
25
50
100
2
75
125
100 125 150 175
o
3
C)
(
V
o
GE
150
V
I
T
C
CE
CE
J
)
(Continued)
= 175
= 5.0V
= 1m
=
V
GE
A
o
175
C
4
5
10000
1000
Figure 12. Leakage Current vs. Junction
100
10
0.1
30
20
10
10
8
6
4
2
0
0
1
1.0
-50
0
Figure 8.
I
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
CE
CE
T
= 10A, T
-25
J
= 5V
1.5
V
Figure 10. Gate Charge
10
= 25
GE
T
J
, GATE TO EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE
o
0
C
J
Q
Transfer Characteristics
2.0
= 25
Temperature
T
g
, GATE CHARGE(nC)
J
20
25
= 175
o
V
C
CE
V
V
2.5
CES
ECS
o
= 6V
50
C
μ
30
s
= 300V
= 24V
V
CES
T
75
3.0
V
J
CE
= -40
= 250V
40
100 125 150 175
= 12V
o
3.5
C
www.fairchildsemi.com
(
o
50
C
4.0
)
4.5
60