FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 7

• Manufacturer Part Number: FGH50T65UPD
• Description: IGBT Transistors 650 V 100 A 240 W
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50T65UPD

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Typical Performance Characteristics
Figure 19. Current Derating
Figure 21. Forward Characteristics
Figure 23. Stored Charge
200
100
600
500
400
300
200
100
120
100
10
80
60
40
20
0
0
0
0
0
0
T
T
C
C
= 25
= 175
25
0.5
10
o
C
o
T
C
C
50
Case temperature, T
Forwad Current, I
= 175
Forward Voltage, V
1.0
20
o
75
C
1.5
T
100
30
C
di/dt = 100A/
= 25
T
di/dt = 100A/
125
C
o
F
C
2.0
200A/
= 75
40
F
[A]
C
200A/
[V]
[
o
o
150
C
C]
μ
μ
s
s
μ
2.5
s
50
μ
175
s
3.0
60
200
7
Figure 20. Load Current Vs. Frequence
250
200
150
100
150
120
Figure 22. Reverse Recovery Current
50
90
60
30
10
0
0
8
6
4
2
Figure 24. Reverse Recovery Time
1k
0
0
Duty cycle : 50%
T
Powe Dissipation = 170 W
T
T
C
C
C
T
T
= 100
C
C
= 25
= 175
= 25
= 175
10
10
Switching Frequency, f [Hz]
o
o
C
o
C
o
C
Forward Current, I
C
o
V
load Current : peak of square wave
C
CC
10k
20
20
= 400V
I
C
[A]
30
30
T
C
di/dt = 200A/
di/dt = 100A/
= 100
di/dt = 200A/
di/dt = 100A/
100A/
100k
F
40
40
100A/
o
[A]
C
200A/
μ
s
200A/
μ
μ
s
μ
μ
s
s
50
s
50
μ
μ
s
μ
s
s
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