FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 3

• Manufacturer Part Number: FGH50T65UPD
• Description: IGBT Transistors 650 V 100 A 240 W
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50T65UPD

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Electrical Characteristics of the IGBT
Electrical Characteristics of the Diode
Q
Q
Q
V
E
t
Q
Symbol
Symbol
rr
FM
rec
g
ge
gc
rr
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
Parameter
V
V
I
I
F
F
CE
GE
= 30A
= 30A, dI
= 400V, I
= 15V
Test Conditions
Test Conditions
F
/dt = 200A/μs
(Continued)
C
T
= 50A,
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
C
C
C
C
C
C
C
= 25
= 175
= 175
= 25
= 175
= 25
= 175
o
o
o
C
C
C
o
o
o
o
C
C
C
C
Min.
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
1.78
144
486
230
130
2.1
46
41
76
31
Max
Max
106
345
195
2.7
53
47
-
-
-
-
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Unit
Unit
nC
nC
nC
nC
uJ
ns
V