MT46H32M32LFCM-6:A TR Micron Technology Inc, MT46H32M32LFCM-6:A TR Datasheet - Page 94

• Manufacturer Part Number: MT46H32M32LFCM-6:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1334-2

Rev. D – 02/08
Rev. C – 09/07
Rev. B – 07/07
Rev. A – 02/07
Revision History for Commands, Operations, and Timing Diagrams
Update – 05/08
Update – 05/08
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
• Deleted reference to Endur-IC
Changed the data sheet to “Production” status
• Updated Figure 6: “60-Ball VFBGA Package” and Figure 7: “90-Ball VFBGA Package”
• Changed the following specifications in Table 7, “Idd Specifications and Conditions
• Changed the following specifications in Table 8, “Idd Specifications and Conditions
• Replaced “TBDs” with values in Table 9, “Idd6 Specifications and Conditions”
• Changed tXP to 25ns for -6 and -75 in Table 10, “Electrical Characteristics and Recom-
• Restructured into separate core and density documents
• Initial release
• Added 9mm x 13mm 90-ball package to the following:
• Updated Idd Values in Table 7: “Idd Specifications and Conditions (x16)” and Table 8:
• Added “L” low-power option to Figure 1: “512Mb Mobile DDR Part Numbering” and
– Table 9, “Idd6 Specifications and Conditions”
– Table 10, “Electrical Characteristics and Recommended AC Operating Conditions”
– Added Table 12, “Target Output Drive Characteristics (Three-Quarter Strength)”
(x16):”
– Idd0 -6 to 70mA, -75 to 60mA; Idd2N -6 to 16mA, -75 to 14mA; Idd2NS -6 to 12mA,
(x32):"
– Idd0 -6 to 100mA, -75 to 70mA; Idd2N -6 to 16mA, -75 to 14mA; Idd2NS -6 to 12mA,
mended AC Operating Conditions”
– “Options," Figure 1: “512Mb Mobile DDR Part Numbering,” and Figure 8: “90-Ball
“Idd Specifications and Conditions (x32)”
Table 9: “Idd6 Specifications and Conditions”
-75 to 10mA; Idd3N -6 to 18mA, -75 to 16mA; Idd3NS -6 to 14mA, -75 to 12mA;
Idd4R -6 to 115mA, -75 to 105mA; Idd4W -6 to 115mA, -75 to 105mA; Idd5 -6 to
140mA, -75 to 140mA
-75 to 10mA; Idd3N -6 to 18mA, -75 to 16mA; Idd3NS -6 to 14mA, -75 to 12mA;
Idd4R -75 to 120mA; Idd4W -6 to 140mA, -75 to 120mA; Idd5 -6 to 140mA, -75 to 140mA
VFBGA Package (9mm x 13mm)”
94
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Revision History